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Condensed Matter

Superconductivity, magnetism, and many-body phenomena.

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#1

Pro-Tensor Network

Gen Yue, Ansi Bai, Linqian Wu et al. 2026-05-07

We introduce the pro-tensor network, a categorification of the tensor network, as a fully rigorous yet graphically transparent framework for studying the collection of many many-body theories, which we dub many-many-body theory. We provide a comprehensive toolbox for the graphical calculations using

#2

Colossal Magnetoresistance and Phonon Driven Exchange Dynamics in Eu$_5$Sn$_2$As$_6$

Luke Pritchard Cairns, Kohtaro Yamakawa, Shengzhi Zhang et al. 2026-05-07

The emergence of colossal magnetoresistance in a new generation of Eu$^{2+}$-based antiferromagnets is intriguing given stark contrasts to the archetypal perovskite manganites and doped Eu-chalcogenides. In this study the thermal conductivity and magnetostriction of Eu$_5$Sn$_2$As$_6$ -- one such re

#6

Quantum Electron Quasicrystal

Pierre-Antoine Graham, Filippo Gaggioli, Liang Fu 2026-05-07

The strongly correlated phases of the homogeneous electron gas constitute the vocabulary of many-body condensed matter physics and find a natural realization in semiconductors. In this setting, recent neural-network variational Monte Carlo calculations discovered an unexpected quantum phase of matte

#7

Winding feature and thermal evolution of the Dirac magnons in CrI$_3$

Weiliang Yao, Matthew B. Stone, Colin L. Sarkis et al. 2026-05-07

Two-dimensional honeycomb lattice ferromagnet chromium tri-iodide (CrI$_3$) has attracted tremendous interest because it retains ferromagnetism down to the monolayer limit and hosts intriguing topological magnons. As a prototypical van der Waals magnet, CrI$_3$ provides an ideal platform for explori

#8

Dominant Role of Sulphur divacancy in Charge Trapping Dynamics in MoS$_2$

Srest Somay, Sitangshu Bhattacharya, Krishna Balasubramanian 2026-05-07

Intrinsic defects govern carrier trapping and recombination in two-dimensional semiconductors, yet the microscopic origin of defect-dependent capture dynamics remains unclear. Here, we compute carrier capture coefficients of vacancy defects, treating monolayer MoS$_2$ as a prototype, from first prin